TY - JOUR
T1 - Fabrication of bottom-emitting organic light-emitting diode panels interconnected with encapsulation substrate by Au-Au flip-chip bonding and capillary-driven filling process
AU - Yamada, S.
AU - Shim, C. H.
AU - Edura, T.
AU - Okada, A.
AU - Adachi, C.
AU - Shoji, S.
AU - Mizuno, J.
N1 - Funding Information:
This work was supported in part by the Center of Innovation Science and Technology based Radical Innovation and Entrepreneurship Program (COI) and by Japan Ministry of Education, Culture, Sports Science & Technology (MEXT) Grant-in-Aid for Scientific Basic Research (S) No. 23226010 and Scientific Basic Research (B) No. 25289241 . The authors thank the MEXT Nanotechnology Platform Support Project of Waseda University.
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We present fabrication and testing of bottom-emitting organic light-emitting diode (OLED) panels based on flip-chip assembly and non-destructive scanning. In this method, the OLED and electric circuits are fabricated on separate substrates and interconnected by low temperature assembly to create a high-performance bottom-emitting OLED including other functions such as thin-film transistor (TFT) circuits. The low temperature assembly process consists of two steps. First, an OLED substrate and encapsulation glass with circuits are bonded at 100 °C via Au-Au bond. Encapsulation glass is utilized for the functional substrate with circuits. Next, the bonded panel is sealed by capillary underfill within and by applying and curing seal materials to the panel edge. The fabricated OLED was non-destructively evaluated by scanning acoustic microscopy (SAM). The SAM image shows all φ500 μm Au bumps were bonded to Au pads, indicating that OLED and encapsulation substrates were assembled. Electroluminescence of the OLED was demonstrated by applying voltage. Stable current-luminance characteristics were obtained for the fabricated OLED with an operating voltage of 3.25 V. The results indicate that the proposed fabrication is available for bottom-emitting OLED controlled by TFT circuits. In future, the assembly process can be widely applied to other flexible organic electronic devices with roll assembly by altering OLED or circuits with other devices because this is a simple pressure method with low temperature, achieving encapsulation at same time.
AB - We present fabrication and testing of bottom-emitting organic light-emitting diode (OLED) panels based on flip-chip assembly and non-destructive scanning. In this method, the OLED and electric circuits are fabricated on separate substrates and interconnected by low temperature assembly to create a high-performance bottom-emitting OLED including other functions such as thin-film transistor (TFT) circuits. The low temperature assembly process consists of two steps. First, an OLED substrate and encapsulation glass with circuits are bonded at 100 °C via Au-Au bond. Encapsulation glass is utilized for the functional substrate with circuits. Next, the bonded panel is sealed by capillary underfill within and by applying and curing seal materials to the panel edge. The fabricated OLED was non-destructively evaluated by scanning acoustic microscopy (SAM). The SAM image shows all φ500 μm Au bumps were bonded to Au pads, indicating that OLED and encapsulation substrates were assembled. Electroluminescence of the OLED was demonstrated by applying voltage. Stable current-luminance characteristics were obtained for the fabricated OLED with an operating voltage of 3.25 V. The results indicate that the proposed fabrication is available for bottom-emitting OLED controlled by TFT circuits. In future, the assembly process can be widely applied to other flexible organic electronic devices with roll assembly by altering OLED or circuits with other devices because this is a simple pressure method with low temperature, achieving encapsulation at same time.
KW - Active-matrix organic-light-emitting diode (AMOLED)
KW - Capillary-driven filling
KW - Encapsulation
KW - Flip-chip assembly
KW - Low temperature Au-Au bonding
KW - Wafer bonding
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U2 - 10.1016/j.mee.2016.04.012
DO - 10.1016/j.mee.2016.04.012
M3 - Article
AN - SCOPUS:84964575927
SN - 0167-9317
VL - 161
SP - 94
EP - 97
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -