FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

Shuichi Okano; Hiroshi Yamakawa; Masakuni Suzuki; Akio Hiraki

FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

Shuichi Okano^*, Hiroshi Yamakawa, Masakuni Suzuki, Akio Hiraki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

5 Citations (Scopus)

Abstract

Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages	1102-1106
Number of pages	5
Volume	26
Edition	7
Publication status	Published - 1987 Jul
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.",

abstract = "Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.",

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AU - Okano, Shuichi

AU - Yamakawa, Hiroshi

AU - Suzuki, Masakuni

AU - Hiraki, Akio

PY - 1987/7

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N2 - Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

AB - Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

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M3 - Chapter

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BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

ER -

FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

Abstract

ASJC Scopus subject areas

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