Fabrication of diamond in-plane-gated field effect transistors using oxygen plasma etching

Tokishige Banno*, Minoru Tachiki, Kazushi Nakazawa, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Diamond dual in-plane-gated field effect transistors with very low gate leakage current have been fabricated on an undoped hydrogen-terminated diamond p-type surface using oxygen plasma etching. Adjusting the threshold voltage optimally by one side gate, lateral electric field from the other side gate modulates the channel conductance. The oxygen plasma etching of 60 nm in depth fully isolated the channel of the hydrogen-terminated diamond surface conductive layer from the side gates resulting very low gate leakage current (< 1 pA at -60 V) at room temperature. This feature provides a necessary condition for the fabrication of diamond single-hole transistors operated at room temperature.

Original languageEnglish
Pages (from-to)408-412
Number of pages5
JournalDiamond and Related Materials
Issue number3-7
Publication statusPublished - 2003 Mar


  • Diamond properties applications
  • Gate leakage
  • In-plane-gate
  • Oxygen plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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