Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Takeyasu Saito*, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Hideyo Okushi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

Original languageEnglish
Pages (from-to)2043-2046
Number of pages4
JournalDiamond and Related Materials
Issue number11-12
Publication statusPublished - 2005 Nov
EventProceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
Duration: 2005 May 112005 May 14


  • Cut-off frequency
  • Field effect transistor
  • Surface conductive layer
  • Transconductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface'. Together they form a unique fingerprint.

Cite this