Fabrication of diamond single-hole transistors using AFM anodization process

Tokishige Banno*, Minoru Tachiki, Hokuto Seo, Hitoshi Umezawa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


By the field-assisted local anodization technique using an atomic force microscope (AFM), a single-hole transistor has been fabricated on an undoped hydrogen-terminated diamond surface where p-type conduction occurs on the subsurface region. A dual side-gated FET structure has been applied to modulate the island potential in the single-hole transistor. The island size is 230 nm×230 nm, and the width of the barrier is approximately 100 nm. Measurements of the current-gate voltage characteristic at a temperature of 4.6 K show significant non-linearities including a current oscillation suggestive of single-hole transistor behavior. The oscillation that is significantly affected by the application of the side gate potential is explained by the shrinkage of the conductive island with the expansion of the depletion region.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalDiamond and Related Materials
Issue number3-6
Publication statusPublished - 2002 Mar


  • Coulomb oscillation
  • Depletion region
  • Diamond properties and applications
  • Single-hole transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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