Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

Tetsuya Osaka; Nao Takano; Tetsuya Kurokawa; Kazuyoshi Ueno

doi:10.1149/1.1421747

Fabrication of electroless NiReP barrier layer on SiO₂ without sputtered seed layer

Tetsuya Osaka^*, Nao Takano, Tetsuya Kurokawa, Kazuyoshi Ueno

^*Corresponding author for this work

Research Organization for Nano & Life Innovation

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO₂ is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO₂ layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO₂ surface. To fabricate a consistently uniform barrier film on the SAM/SiO₂ surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO₂ surface in a high pH bath.

Original language	English
Pages (from-to)	C7-C10
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1149/1.1421747
Publication status	Published - 2002 Jan 1

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO2 surface in a high pH bath.",

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T1 - Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

AU - Osaka, Tetsuya

AU - Takano, Nao

AU - Kurokawa, Tetsuya

AU - Ueno, Kazuyoshi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO2 surface in a high pH bath.

AB - A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO2 surface in a high pH bath.

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Fabrication of electroless NiReP barrier layer on SiO₂ without sputtered seed layer

Abstract

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