Fabrication of epitaxial Co2MnSi films on lattice-matched MgAl2O4 substrates by ion-beam assisted sputtering

K. Ueda; M. Nishiwaki; T. Soumiya; H. Asano

doi:10.1016/j.tsf.2014.09.045

Fabrication of epitaxial Co₂MnSi films on lattice-matched MgAl₂O₄ substrates by ion-beam assisted sputtering

K. Ueda^*, M. Nishiwaki, T. Soumiya, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We show that epitaxial Co₂MnSi films can be fabricated on lattice-matched MgAl₂O₄ substrates using an ion-beam-assisted sputtering method. Low temperature growth below ~ 500 °C with Ar ion-beam assistance enabled high-quality Co₂MnSi films with ideal saturation magnetization and highly-ordered L2₁ structures. The Co₂MnSi films also demonstrated a negative anisotropic magnetoresistance of ~ 0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co₂MnSi films at low growth temperatures.

Original language	English
Pages (from-to)	134-137
Number of pages	4
Journal	Thin Solid Films
Volume	570
Issue number	PartA
DOIs	https://doi.org/10.1016/j.tsf.2014.09.045
Publication status	Published - 2014 Nov 3
Externally published	Yes

Keywords

Cobalt manganese silicon
Half-metal
Heusler alloy
Ion-beam assisted sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2014.09.045

Cite this

@article{c0fead5237fd46b2aabc720403e0a1b4,

title = "Fabrication of epitaxial Co2MnSi films on lattice-matched MgAl2O4 substrates by ion-beam assisted sputtering",

abstract = "We show that epitaxial Co2MnSi films can be fabricated on lattice-matched MgAl2O4 substrates using an ion-beam-assisted sputtering method. Low temperature growth below ~ 500 °C with Ar ion-beam assistance enabled high-quality Co2MnSi films with ideal saturation magnetization and highly-ordered L21 structures. The Co2MnSi films also demonstrated a negative anisotropic magnetoresistance of ~ 0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co2MnSi films at low growth temperatures.",

keywords = "Cobalt manganese silicon, Half-metal, Heusler alloy, Ion-beam assisted sputtering",

author = "K. Ueda and M. Nishiwaki and T. Soumiya and H. Asano",

note = "Funding Information: This work was supported by JSPS KAKENHI (Grant Numbers 22760250 , 23656214 , and 24560372 ) and the Tatematsu Foundation . Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

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doi = "10.1016/j.tsf.2014.09.045",

language = "English",

volume = "570",

pages = "134--137",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Fabrication of epitaxial Co2MnSi films on lattice-matched MgAl2O4 substrates by ion-beam assisted sputtering

AU - Ueda, K.

AU - Nishiwaki, M.

AU - Soumiya, T.

AU - Asano, H.

N1 - Funding Information: This work was supported by JSPS KAKENHI (Grant Numbers 22760250 , 23656214 , and 24560372 ) and the Tatematsu Foundation . Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014/11/3

Y1 - 2014/11/3

N2 - We show that epitaxial Co2MnSi films can be fabricated on lattice-matched MgAl2O4 substrates using an ion-beam-assisted sputtering method. Low temperature growth below ~ 500 °C with Ar ion-beam assistance enabled high-quality Co2MnSi films with ideal saturation magnetization and highly-ordered L21 structures. The Co2MnSi films also demonstrated a negative anisotropic magnetoresistance of ~ 0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co2MnSi films at low growth temperatures.

AB - We show that epitaxial Co2MnSi films can be fabricated on lattice-matched MgAl2O4 substrates using an ion-beam-assisted sputtering method. Low temperature growth below ~ 500 °C with Ar ion-beam assistance enabled high-quality Co2MnSi films with ideal saturation magnetization and highly-ordered L21 structures. The Co2MnSi films also demonstrated a negative anisotropic magnetoresistance of ~ 0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co2MnSi films at low growth temperatures.

KW - Cobalt manganese silicon

KW - Half-metal

KW - Heusler alloy

KW - Ion-beam assisted sputtering

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