Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

H. Shibata; Y. Makita; H. Katsumata; S. Kimura; Naoto Kobayashi; M. Hasegawa; S. Hishita; A. C. Beye; H. Takahashi; J. Tanabe; S. Uekusa

Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

H. Shibata^*, Y. Makita, H. Katsumata, S. Kimura, Naoto Kobayashi, M. Hasegawa, S. Hishita, A. C. Beye, H. Takahashi, J. Tanabe, S. Uekusa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si _1-xC _x alloy thin films on Si using low-energy (100 - 300 eV) C ⁺ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I _C, which suggests that the selective sputtering for deposited C atoms by incident C ⁺ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I _C.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	517-522
Number of pages	6
Volume	402
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: 1995 Nov 27 → 1995 Nov 30

Other

Other	Proceedings of the 1995 MRS Fall Symposium
City	Boston, MA, USA
Period	95/11/27 → 95/11/30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Shibata, H., Makita, Y., Katsumata, H., Kimura, S., Kobayashi, N., Hasegawa, M., Hishita, S., Beye, A. C., Takahashi, H., Tanabe, J., & Uekusa, S. (1996). Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 402, pp. 517-522). Materials Research Society.

Shibata, H, Makita, Y, Katsumata, H, Kimura, S, Kobayashi, N, Hasegawa, M, Hishita, S, Beye, AC, Takahashi, H, Tanabe, J & Uekusa, S 1996, Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. in Materials Research Society Symposium - Proceedings. vol. 402, Materials Research Society, pp. 517-522, Proceedings of the 1995 MRS Fall Symposium, Boston, MA, USA, 95/11/27.

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title = "Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy",

abstract = "We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C. ",

author = "H. Shibata and Y. Makita and H. Katsumata and S. Kimura and Naoto Kobayashi and M. Hasegawa and S. Hishita and Beye, {A. C.} and H. Takahashi and J. Tanabe and S. Uekusa",

year = "1996",

language = "English",

volume = "402",

pages = "517--522",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

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TY - GEN

T1 - Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

AU - Shibata, H.

AU - Makita, Y.

AU - Katsumata, H.

AU - Kimura, S.

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Hishita, S.

AU - Beye, A. C.

AU - Takahashi, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1996

Y1 - 1996

N2 - We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

AB - We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

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M3 - Conference contribution

AN - SCOPUS:0029754158

VL - 402

SP - 517

EP - 522

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

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ASJC Scopus subject areas

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