Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN

Masanobu Hiroki*, Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi, Takashi Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy. It was found that GaN on alumina selectively regrown from pinholes in alumina by annealing prior to GaN regrowth. Hardly any of the dislocations in the GaN template propagated through the interlayer. Most of dislocations were terminated or bent at the interface between the alumina and regrown GaN. On the other hand, new vertical dark lines and horizontal dislocations were generated in regrown layer. The vertical lines were found to correspond to an inversion domain from convergent beam electron diffraction analysis.

Original languageEnglish
Pages (from-to)1930-1933
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2004 Apr
Externally publishedYes


  • Alumina
  • Dislocation
  • Dislocation density
  • GaN

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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