Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition

Toyokatsu Fujisaki; Minoru Tachiki; Norikazu Taniyama; Minoru Kudo; Hiroshi Kawarada

doi:10.1016/S0925-9635(01)00654-9

Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition

Toyokatsu Fujisaki^*, Minoru Tachiki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm² area, as revealed by atomic force microscopy observations.

Original language	English
Pages (from-to)	478-481
Number of pages	4
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00654-9
Publication status	Published - 2002 Mar

Keywords

Chemical vapor deposition
Diamond
Heteroepitaxy
Iridium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(01)00654-9

Cite this

@article{252d46aa538e43bda86152d26cff86ba,

title = "Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition",

abstract = "Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.",

keywords = "Chemical vapor deposition, Diamond, Heteroepitaxy, Iridium",

author = "Toyokatsu Fujisaki and Minoru Tachiki and Norikazu Taniyama and Minoru Kudo and Hiroshi Kawarada",

note = "Funding Information: The authors would like to thank Dr T. Ishikura of Tokyo Gas Co Ltd for lending us the RHEED apparatus. The authors also would like to thank Dr P. Koidl, Dr C. Wild, and Dr N. Herres of the Fraunhofer Institute for Applied Solid-State Physics for carrying out rocking curve measurements in X-ray diffraction analysis and making the back contact coating for the Ir/MgO substrates. This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2002",

month = mar,

doi = "10.1016/S0925-9635(01)00654-9",

language = "English",

volume = "11",

pages = "478--481",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-6",

}

TY - JOUR

T1 - Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition

AU - Fujisaki, Toyokatsu

AU - Tachiki, Minoru

AU - Taniyama, Norikazu

AU - Kudo, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: The authors would like to thank Dr T. Ishikura of Tokyo Gas Co Ltd for lending us the RHEED apparatus. The authors also would like to thank Dr P. Koidl, Dr C. Wild, and Dr N. Herres of the Fraunhofer Institute for Applied Solid-State Physics for carrying out rocking curve measurements in X-ray diffraction analysis and making the back contact coating for the Ir/MgO substrates. This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2002/3

Y1 - 2002/3

N2 - Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.

AB - Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.

KW - Chemical vapor deposition

KW - Diamond

KW - Heteroepitaxy

KW - Iridium

UR - http://www.scopus.com/inward/record.url?scp=0036508431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036508431&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00654-9

DO - 10.1016/S0925-9635(01)00654-9

M3 - Article

AN - SCOPUS:0036508431

SN - 0925-9635

VL - 11

SP - 478

EP - 481

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this