Fabrication of heterostructure p-β-Fe_0.95Mn_0.05Si₂/n-Si diodes by Fe⁺ and Mn⁺ co-implantation in Si(100) substrates

Engineering & Materials Science

• Heterojunctions 100%
• Annealing 76%
• Impurities 73%
• Hole concentration 72%
• Rutherford backscattering spectroscopy 71%
• Diodes 70%
• Hole mobility 63%
• Fabrication 56%
• Substrates 54%
• Silicides 52%
• Spectrometry 50%
• Structural properties 41%
• Electric properties 40%
• Atoms 39%
• Electrons 38%
• X ray diffraction 37%
• Iron 34%
• Temperature 15%

Physics & Astronomy

• implantation 68%
• diodes 57%
• conductivity 50%
• fabrication 46%
• impurities 33%
• annealing 30%
• hole mobility 29%
• silicides 26%
• backscattering 22%
• electrical properties 18%
• iron 18%
• dosage 16%
• electrical resistivity 16%
• diffraction 13%
• spectroscopy 13%
• atoms 12%
• x rays 11%
• electrons 10%

Chemical Compounds

• Conductivity 51%
• Point Group C∞V 40%
• Annealing 40%
• Hole Concentration 39%
• Rutherford Backscattering Spectroscopy 32%
• Hole Mobility 30%
• Polycrystalline Solid 22%
• Electrical Property 21%
• Donor 17%
• Chemical Transformation 16%
• Electron Particle 13%
• X-Ray Diffraction 12%
• Mixture 11%