Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Jianbo Liang*, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu, Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing Wang, Makoto Kasu, Naoteru Shigekawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed of GaAs and diamond was formed at the bonding interface. The thickness of the GaAs and diamond crystal defect layers was determined to be 0.4 and 1.6 nm, respectively. After annealing at 400 °C, no changes were observed in the thickness of the crystal defect layer and the interfacial structure. The thermal characterization of the transmission line model (TLM) patterns formed on the GaAs layer bonded to diamond and sapphire substrates is demonstrated. The thermal resistance of the GaAs TLM patterns formed on the diamond and sapphire substrates was determined to be 6 and 34.9 K/W, respectively. The GaAs TLM patterns formed on the diamond showed an excellent heat dissipation property due to the high thermal conductivity of diamond.

Original languageEnglish
Article number108207
JournalDiamond and Related Materials
Publication statusPublished - 2021 Jan


  • Direct bonding
  • GaAs/diamond bonding interface
  • Heat sink
  • Heterointerface
  • Interfacial structure
  • Power devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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