Fabrication of highly stacked quantum dot laser

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

Fabrication of highly stacked quantum dot laser

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original language	English
Title of host publication	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication status	Published - 2009 Nov 16
Externally published	Yes
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2009 Jun 2 → 2009 Jun 4

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/6/2 → 09/6/4

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Fabrication of highly stacked quantum dot laser. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5225947] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Fabrication of highly stacked quantum dot laser. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5225947 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Fabrication of highly stacked quantum dot laser. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5225947, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 09/6/2.

Akahane K, Yamamoto N, Kawanishi T. Fabrication of highly stacked quantum dot laser. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5225947. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Fabrication of highly stacked quantum dot laser. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

@inproceedings{e8c47df85c6e47b19099db575892473e,

title = "Fabrication of highly stacked quantum dot laser",

abstract = "We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2009",

month = nov,

day = "16",

language = "English",

isbn = "9781557528698",

series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",

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TY - GEN

T1 - Fabrication of highly stacked quantum dot laser

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2009/11/16

Y1 - 2009/11/16

N2 - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

AB - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

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UR - http://www.scopus.com/inward/citedby.url?scp=71049151577&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:71049151577

SN - 9781557528698

T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Y2 - 2 June 2009 through 4 June 2009

ER -

Fabrication of highly stacked quantum dot laser

Abstract

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Other

ASJC Scopus subject areas

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