TY - JOUR
T1 - Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method
AU - Akahane, Kouichi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
N1 - Funding Information:
We would like to acknowledge the staff of the Photonic Device Laboratory at National Institute of Information and Communications Technology for their technical support. This work is conducted as a part of "Research and development for expansion of radio wave resources," supported by the Ministry of Internal Affairs and Communications , Japan.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/12/15
Y1 - 2015/12/15
N2 - Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.
AB - Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.
KW - A1. Nanostructures
KW - A3. Molecular beam epitaxy
KW - A3. Superlattices
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2015.08.016
DO - 10.1016/j.jcrysgro.2015.08.016
M3 - Article
AN - SCOPUS:84943417503
SN - 0022-0248
VL - 432
SP - 15
EP - 18
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 22963
ER -