Fabrication of nano/microstructures in SiO2 and TiO2 by swift ions

K. Awazu; M. Fujimaki; S. Ishii; K. Shima; K. Nomura; Yoshimichi Ohki

doi:10.1109/IMNC.2002.1178547

Fabrication of nano/microstructures in SiO₂ and TiO₂ by swift ions

K. Awazu^*, M. Fujimaki, S. Ishii, K. Shima, K. Nomura, Yoshimichi Ohki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO₂ and rutile single crystal TiO₂. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	68-69
Number of pages	2
ISBN (Print)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178547
Publication status	Published - 2002
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178547

Cite this

Awazu, K, Fujimaki, M, Ishii, S, Shima, K, Nomura, K & Ohki, Y 2002, Fabrication of nano/microstructures in SiO₂ and TiO₂ by swift ions. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178547, Institute of Electrical and Electronics Engineers Inc., pp. 68-69, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178547

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abstract = "The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.",

author = "K. Awazu and M. Fujimaki and S. Ishii and K. Shima and K. Nomura and Yoshimichi Ohki",

year = "2002",

doi = "10.1109/IMNC.2002.1178547",

language = "English",

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AU - Awazu, K.

AU - Fujimaki, M.

AU - Ishii, S.

AU - Shima, K.

AU - Nomura, K.

AU - Ohki, Yoshimichi

PY - 2002

Y1 - 2002

N2 - The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

AB - The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

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BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

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