Fabrication of patterned nanostructures with various metal species on Si wafer surfaces by maskless and electroless process

Maskless and electroless fabrication was demonstrated to form patterned nanostructures of various metal species, based upon the process previously developed by the authors. In this process, the metallic nanostructures were formed on the surface of clean, hydrogen terminated p-(1 0 0) Si wafer with pre-patterned nanoscopic defects, which were confirmed to possess higher activity for the reductive deposition reaction of the metal ion species. The deposition was achieved spontaneously and selectively at the defect sites on the wafer surface by immersing into dilute aqueous fluoride solution containing trace amount of metal ion species. By optimizing the formation condition of the patterned defects and composition of the solution, fabrication of patterned nanostructures of various metallic species such as Au, Ag, and Co, was achieved. Formation of the patterned nanostructures to 10 μm² in extent, as well as control of the feature size of the deposits by adjusting the formation condition of the patterned defects were also attempted.