Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa; Eiji Rokuta; Hidekazu Murata; Hiroshi Shimoyama; Chuhei Oshima

doi:10.1109/IVNC.2012.6316907

Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa^*, Eiji Rokuta, Hidekazu Murata, Hiroshi Shimoyama, Chuhei Oshima

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

Original language	English
Title of host publication	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
Pages	216-217
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2012.6316907
Publication status	Published - 2012
Event	25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju Duration: 2012 Jul 9 → 2012 Jul 13

Other

Other	25th International Vacuum Nanoelectronics Conference, IVNC 2012
City	Jeju
Period	12/7/9 → 12/7/13

Keywords

FEM
FIM
nanopyramid
single-atom emitter

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/IVNC.2012.6316907

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Nakagawa, T, Rokuta, E, Murata, H, Shimoyama, H & Oshima, C 2012, Fabrication of single atom emitters prepared by using surface diffusion of noble metals. in Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012., 6316907, pp. 216-217, 25th International Vacuum Nanoelectronics Conference, IVNC 2012, Jeju, 12/7/9. https://doi.org/10.1109/IVNC.2012.6316907

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title = "Fabrication of single atom emitters prepared by using surface diffusion of noble metals",

abstract = "We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.",

keywords = "FEM, FIM, nanopyramid, single-atom emitter",

author = "Tatsuhiro Nakagawa and Eiji Rokuta and Hidekazu Murata and Hiroshi Shimoyama and Chuhei Oshima",

year = "2012",

doi = "10.1109/IVNC.2012.6316907",

language = "English",

isbn = "9781467319812",

pages = "216--217",

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TY - GEN

T1 - Fabrication of single atom emitters prepared by using surface diffusion of noble metals

AU - Nakagawa, Tatsuhiro

AU - Rokuta, Eiji

AU - Murata, Hidekazu

AU - Shimoyama, Hiroshi

AU - Oshima, Chuhei

PY - 2012

Y1 - 2012

N2 - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

AB - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

KW - FEM

KW - FIM

KW - nanopyramid

KW - single-atom emitter

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U2 - 10.1109/IVNC.2012.6316907

DO - 10.1109/IVNC.2012.6316907

M3 - Conference contribution

AN - SCOPUS:84869027295

SN - 9781467319812

SP - 216

EP - 217

BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Y2 - 9 July 2012 through 13 July 2012

ER -

Fabrication of single atom emitters prepared by using surface diffusion of noble metals

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Keywords

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