Abstract
Silver gallium telluride (AgGaTe2), an environmentally friendly material with a high optical absorption coefficient, was fabricated by the close-spaced sublimation (CSS) method. It was found that stoichiometric AgGaTe2 thin films can be produced by using GaTe as the source material for CSS and controlling the Ga molar concentration. Solar cells based on Cu(In, Ga)Se2 (CIGS), which has a similar structure to that of AgGaTe2, have been reported to exhibit conversion efficiencies greater than 20% when the CIGS film is Ga-rich and Cu-poor. By increasing the diffusion/sublimation time during the formation of AgGaTe2 layers and using source materials with a Ga-rich composition, Ga-enriched AgGaTe2 thin films were formed. Optimal Ga-rich AgGaTe2 thin films were produced with extended diffusion/sublimation time, with a Ga mole fraction of 32%. However, Ga-rich Ag-Ga-Te compounds, AgGa5Te8 or Ga2Te3 were developed. Solar cells containing Ga-rich AgGaTe2 films displayed improved current density–voltage characteristics and spectral sensitivity compared with those of cells containing stoichiometric AgGaTe2 films. Under AM 1.5 irradiation, the conversion efficiency of the solar cells was recorded at 1.21%.
Original language | English |
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Article number | 100619 |
Journal | Journal of Electronic Materials |
DOIs | |
Publication status | Accepted/In press - 2025 |
Keywords
- AgGaTe
- chalcopyrite
- close-spaced sublimation
- solar cells
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry