Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto; H. Kitada; A. Tackeuchi; A. Endho; Y. Yamaguchi; S. Muto

Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto^*, H. Kitada, A. Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

Original language	English
Pages	739-740
Number of pages	2
Publication status	Published - 1991 Jan 1
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography",

abstract = "We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.",

author = "H. Arimoto and H. Kitada and A. Tackeuchi and A. Endho and Y. Yamaguchi and S. Muto",

year = "1991",

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note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

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T1 - Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

AU - Arimoto, H.

AU - Kitada, H.

AU - Tackeuchi, A.

AU - Endho, A.

AU - Yamaguchi, Y.

AU - Muto, S.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

AB - We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

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M3 - Paper

AN - SCOPUS:0025888627

SP - 739

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T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

Abstract

Other

ASJC Scopus subject areas

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