Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

Yukio Fujiwara; Kouji Kondou; Kouji Watanabe; Hidehiko Nonaka; Naoaki Saito; Toshiyuki Fujimoto; Akira Kurokawa; Shingo Ichimura; Mitsuhiro Tomita

doi:10.1016/j.apsusc.2008.05.014

Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

Yukio Fujiwara^*, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A Ir ₄ (CO) ₇ ⁺ primary ion beam, at energies from 2.5 keV to 10 keV, was used to profile boron-delta layers in Si to investigate the influences of atomic mixing and surface roughness on the degradation of depth resolution. Factorial analyses using the mixing-roughness-information (MRI) model indicated that the influence of the mixing increased as beam energy was reduced below 5 keV in the case of oxygen flooding. It was confirmed that the magnitude of the MRI surface roughness was different from that of the AFM surface roughness. The discrepancy in the magnitude of roughness was examined by considering the difference in sputtering depth as well as the definition of the MRI surface roughness.

Original language	English
Pages (from-to)	1338-1340
Number of pages	3
Journal	Applied Surface Science
Volume	255
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2008.05.014
Publication status	Published - 2008 Dec 15
Externally published	Yes

Keywords

Cluster
Depth profiling
Ir (CO)
MRI model
Mixing
Surface roughness

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.05.014

Cite this

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title = "Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams",

abstract = " A Ir 4 (CO) 7 + primary ion beam, at energies from 2.5 keV to 10 keV, was used to profile boron-delta layers in Si to investigate the influences of atomic mixing and surface roughness on the degradation of depth resolution. Factorial analyses using the mixing-roughness-information (MRI) model indicated that the influence of the mixing increased as beam energy was reduced below 5 keV in the case of oxygen flooding. It was confirmed that the magnitude of the MRI surface roughness was different from that of the AFM surface roughness. The discrepancy in the magnitude of roughness was examined by considering the difference in sputtering depth as well as the definition of the MRI surface roughness.",

keywords = "Cluster, Depth profiling, Ir (CO), MRI model, Mixing, Surface roughness",

author = "Yukio Fujiwara and Kouji Kondou and Kouji Watanabe and Hidehiko Nonaka and Naoaki Saito and Toshiyuki Fujimoto and Akira Kurokawa and Shingo Ichimura and Mitsuhiro Tomita",

year = "2008",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2008.05.014",

language = "English",

volume = "255",

pages = "1338--1340",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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T1 - Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Watanabe, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

PY - 2008/12/15

Y1 - 2008/12/15

N2 - A Ir 4 (CO) 7 + primary ion beam, at energies from 2.5 keV to 10 keV, was used to profile boron-delta layers in Si to investigate the influences of atomic mixing and surface roughness on the degradation of depth resolution. Factorial analyses using the mixing-roughness-information (MRI) model indicated that the influence of the mixing increased as beam energy was reduced below 5 keV in the case of oxygen flooding. It was confirmed that the magnitude of the MRI surface roughness was different from that of the AFM surface roughness. The discrepancy in the magnitude of roughness was examined by considering the difference in sputtering depth as well as the definition of the MRI surface roughness.

AB - A Ir 4 (CO) 7 + primary ion beam, at energies from 2.5 keV to 10 keV, was used to profile boron-delta layers in Si to investigate the influences of atomic mixing and surface roughness on the degradation of depth resolution. Factorial analyses using the mixing-roughness-information (MRI) model indicated that the influence of the mixing increased as beam energy was reduced below 5 keV in the case of oxygen flooding. It was confirmed that the magnitude of the MRI surface roughness was different from that of the AFM surface roughness. The discrepancy in the magnitude of roughness was examined by considering the difference in sputtering depth as well as the definition of the MRI surface roughness.

KW - Cluster

KW - Depth profiling

KW - Ir (CO)

KW - MRI model

KW - Mixing

KW - Surface roughness

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DO - 10.1016/j.apsusc.2008.05.014

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VL - 255

SP - 1338

EP - 1340

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

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Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

Abstract

Keywords

ASJC Scopus subject areas

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