Failure of the modal gain model in a GaN based laser diode

G. Mohs; T. Aoki; M. Nagai; R. Shimano; M. Kuwata-Gonokami; S. Nakamura

doi:10.1016/S0038-1098(97)10005-9

Failure of the modal gain model in a GaN based laser diode

G. Mohs^*, T. Aoki, M. Nagai, R. Shimano, M. Kuwata-Gonokami, S. Nakamura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The optical gain in a Nichia® group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 μm the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm^-1 are observed when exciting with 20 MW cm^-2. Plasma recombination from a quantum confined level is suggested as the gain mechanism.

Original language	English
Pages (from-to)	643-648
Number of pages	6
Journal	Solid State Communications
Volume	104
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(97)10005-9
Publication status	Published - 1997 Dec
Externally published	Yes

Keywords

A. semiconductors
D. optical properties
E. nonlinear optics

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(97)10005-9

Cite this

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title = "Failure of the modal gain model in a GaN based laser diode",

abstract = "The optical gain in a Nichia{\textregistered} group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 μm the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm-1 are observed when exciting with 20 MW cm-2. Plasma recombination from a quantum confined level is suggested as the gain mechanism.",

keywords = "A. semiconductors, D. optical properties, E. nonlinear optics",

author = "G. Mohs and T. Aoki and M. Nagai and R. Shimano and M. Kuwata-Gonokami and S. Nakamura",

note = "Funding Information: Acknowledgements-This work was supported by a grant-in-aid for scientific research in the priority area Mutual Quantum Manipulation of Radiation Field and Matter from the ministry of Education, Science and Culture of Japan and the CREST (Core Research for Evolutional Science and Technology) program of the Japan Science and Technology Corporation (JST).",

year = "1997",

month = dec,

doi = "10.1016/S0038-1098(97)10005-9",

language = "English",

volume = "104",

pages = "643--648",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Failure of the modal gain model in a GaN based laser diode

AU - Mohs, G.

AU - Aoki, T.

AU - Nagai, M.

AU - Shimano, R.

AU - Kuwata-Gonokami, M.

AU - Nakamura, S.

N1 - Funding Information: Acknowledgements-This work was supported by a grant-in-aid for scientific research in the priority area Mutual Quantum Manipulation of Radiation Field and Matter from the ministry of Education, Science and Culture of Japan and the CREST (Core Research for Evolutional Science and Technology) program of the Japan Science and Technology Corporation (JST).

PY - 1997/12

Y1 - 1997/12

N2 - The optical gain in a Nichia® group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 μm the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm-1 are observed when exciting with 20 MW cm-2. Plasma recombination from a quantum confined level is suggested as the gain mechanism.

AB - The optical gain in a Nichia® group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 μm the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm-1 are observed when exciting with 20 MW cm-2. Plasma recombination from a quantum confined level is suggested as the gain mechanism.

KW - A. semiconductors

KW - D. optical properties

KW - E. nonlinear optics

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U2 - 10.1016/S0038-1098(97)10005-9

DO - 10.1016/S0038-1098(97)10005-9

M3 - Article

AN - SCOPUS:0031355343

SN - 0038-1098

VL - 104

SP - 643

EP - 648

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Failure of the modal gain model in a GaN based laser diode

Abstract

Keywords

ASJC Scopus subject areas

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