FBC (Floating Body Cell) for Embedded DRAM on SOI

Kazumi Inoh; Tomoaki Shino; Hiroaki Yamada; Hiroomi Nakajima; Yoshihiro Minami; Takashi Yamada; Takashi Ohsawa; Tomoki Higashi; Katsuyuki Fujita; Tamio Ikehashi; Takeshi Kajiyama; Yoshiaki Fukuzumi; Takeshi Hamamoto; Hidemi Ishiuchi

FBC (Floating Body Cell) for Embedded DRAM on SOI

Kazumi Inoh^*, Tomoaki Shino, Hiroaki Yamada, Hiroomi Nakajima, Yoshihiro Minami, Takashi Yamada, Takashi Ohsawa, Tomoki Higashi, Katsuyuki Fujita, Tamio Ikehashi, Takeshi Kajiyama, Yoshiaki Fukuzumi, Takeshi Hamamoto, Hidemi Ishiuchi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

35 Citations (Scopus)

Abstract

The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.17μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer. The memory cell layout and the process integration have been designed from the viewpoint of the logic process compatibility without sacrificing the data retention characteristics. The salicide process with the poly-Si plug is implemented into the process integration. The most important device characteristics for realizing the FBC is the threshold voltage difference (Δ Vth) of the cell transistor between "1" state and "0" state. The key device parameters in order to enlarge the Δ Vth are experimentally clarified. A Δ Vth of 0.4V has been obtained, which leads to 99.77% function bit yield of 96Kbit ADM (Array Diagnostic Monitor). The retention time of 5sec has been realized at the room temperature.

Original language	English
Pages (from-to)	63-64
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2003
Externally published	Yes
Event	2003 Symposium on VLSI Technology - Kyoto, Japan Duration: 2003 Jun 10 → 2003 Jun 12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "FBC (Floating Body Cell) for Embedded DRAM on SOI",

abstract = "The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.17μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer. The memory cell layout and the process integration have been designed from the viewpoint of the logic process compatibility without sacrificing the data retention characteristics. The salicide process with the poly-Si plug is implemented into the process integration. The most important device characteristics for realizing the FBC is the threshold voltage difference (Δ Vth) of the cell transistor between {"}1{"} state and {"}0{"} state. The key device parameters in order to enlarge the Δ Vth are experimentally clarified. A Δ Vth of 0.4V has been obtained, which leads to 99.77% function bit yield of 96Kbit ADM (Array Diagnostic Monitor). The retention time of 5sec has been realized at the room temperature.",

author = "Kazumi Inoh and Tomoaki Shino and Hiroaki Yamada and Hiroomi Nakajima and Yoshihiro Minami and Takashi Yamada and Takashi Ohsawa and Tomoki Higashi and Katsuyuki Fujita and Tamio Ikehashi and Takeshi Kajiyama and Yoshiaki Fukuzumi and Takeshi Hamamoto and Hidemi Ishiuchi",

year = "2003",

language = "English",

pages = "63--64",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 Symposium on VLSI Technology ; Conference date: 10-06-2003 Through 12-06-2003",

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TY - JOUR

T1 - FBC (Floating Body Cell) for Embedded DRAM on SOI

AU - Inoh, Kazumi

AU - Shino, Tomoaki

AU - Yamada, Hiroaki

AU - Nakajima, Hiroomi

AU - Minami, Yoshihiro

AU - Yamada, Takashi

AU - Ohsawa, Takashi

AU - Higashi, Tomoki

AU - Fujita, Katsuyuki

AU - Ikehashi, Tamio

AU - Kajiyama, Takeshi

AU - Fukuzumi, Yoshiaki

AU - Hamamoto, Takeshi

AU - Ishiuchi, Hidemi

PY - 2003

Y1 - 2003

N2 - The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.17μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer. The memory cell layout and the process integration have been designed from the viewpoint of the logic process compatibility without sacrificing the data retention characteristics. The salicide process with the poly-Si plug is implemented into the process integration. The most important device characteristics for realizing the FBC is the threshold voltage difference (Δ Vth) of the cell transistor between "1" state and "0" state. The key device parameters in order to enlarge the Δ Vth are experimentally clarified. A Δ Vth of 0.4V has been obtained, which leads to 99.77% function bit yield of 96Kbit ADM (Array Diagnostic Monitor). The retention time of 5sec has been realized at the room temperature.

AB - The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.17μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer. The memory cell layout and the process integration have been designed from the viewpoint of the logic process compatibility without sacrificing the data retention characteristics. The salicide process with the poly-Si plug is implemented into the process integration. The most important device characteristics for realizing the FBC is the threshold voltage difference (Δ Vth) of the cell transistor between "1" state and "0" state. The key device parameters in order to enlarge the Δ Vth are experimentally clarified. A Δ Vth of 0.4V has been obtained, which leads to 99.77% function bit yield of 96Kbit ADM (Array Diagnostic Monitor). The retention time of 5sec has been realized at the room temperature.

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M3 - Conference article

AN - SCOPUS:0141649575

SN - 0743-1562

SP - 63

EP - 64

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2003 Symposium on VLSI Technology

Y2 - 10 June 2003 through 12 June 2003

ER -

FBC (Floating Body Cell) for Embedded DRAM on SOI

Abstract

ASJC Scopus subject areas

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