FBC's potential of 6F2 single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin

Fumiyoshi Matsuoka; Takashi Ohsawa; Tomoki Higashi; Hironobu Furuhashi; Kosuke Hatsuda; Katsuyuki Fujita; Ryo Fukuda; Nobuyuki Ikumi; Tomoaki Shino; Yoshihiro Minami; Hiroomi Nakajima; Takeshi Hamamoto; Akihiro Nitayama; Yohji Watanabe

doi:10.1109/IEDM.2007.4418857

FBC's potential of 6F² single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin

Fumiyoshi Matsuoka^*, Takashi Ohsawa, Tomoki Higashi, Hironobu Furuhashi, Kosuke Hatsuda, Katsuyuki Fujita, Ryo Fukuda, Nobuyuki Ikumi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Akihiro Nitayama, Yohji Watanabe

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

A 6F² single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC's spacers can be optimized for making the SSM as large as 8μA at ±4.5σ without sacrificing the retention time.

Original language	English
Article number	4418857
Pages (from-to)	39-42
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418857
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418857

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Matsuoka, F., Ohsawa, T., Higashi, T., Furuhashi, H., Hatsuda, K., Fujita, K., Fukuda, R., Ikumi, N., Shino, T., Minami, Y., Nakajima, H., Hamamoto, T., Nitayama, A., & Watanabe, Y. (2007). FBC's potential of 6F² single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin. Technical Digest - International Electron Devices Meeting, IEDM, 39-42. Article 4418857. https://doi.org/10.1109/IEDM.2007.4418857

FBC's potential of 6F² single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin. / Matsuoka, Fumiyoshi; Ohsawa, Takashi; Higashi, Tomoki et al.
In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2007, p. 39-42.

Research output: Contribution to journal › Conference article › peer-review

Matsuoka, F, Ohsawa, T, Higashi, T, Furuhashi, H, Hatsuda, K, Fujita, K, Fukuda, R, Ikumi, N, Shino, T, Minami, Y, Nakajima, H, Hamamoto, T, Nitayama, A & Watanabe, Y 2007, 'FBC's potential of 6F² single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin', Technical Digest - International Electron Devices Meeting, IEDM, pp. 39-42. https://doi.org/10.1109/IEDM.2007.4418857

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abstract = "A 6F2 single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC's spacers can be optimized for making the SSM as large as 8μA at ±4.5σ without sacrificing the retention time.",

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AU - Higashi, Tomoki

AU - Furuhashi, Hironobu

AU - Hatsuda, Kosuke

AU - Fujita, Katsuyuki

AU - Fukuda, Ryo

AU - Ikumi, Nobuyuki

AU - Shino, Tomoaki

AU - Minami, Yoshihiro

AU - Nakajima, Hiroomi

AU - Hamamoto, Takeshi

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FBC's potential of 6F² single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin

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