Feasibility Study of TiOx Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications

Shaili Falina; Kyosuke Tanabe; Yutaro Iyama; Kaito Tadenuma; Te Bi; Yu Hao Chang; Asrulnizam Abd Manaf; Mohd Syamsul; Hiroshi Kawarada

doi:10.1002/pssa.202000634

Feasibility Study of TiO_x Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications

Shaili Falina, Kyosuke Tanabe, Yutaro Iyama, Kaito Tadenuma, Te Bi, Yu Hao Chang, Asrulnizam Abd Manaf, Mohd Syamsul^*, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The feasibility of titanium oxide (TiO_x) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiO_x encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (g_m) to 3000 μA mm⁻¹ and 11.3 mS mm⁻¹, respectively. Furthermore, the scaling g_m behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The g_m is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm² (V s)⁻¹ is estimated to be 3–5 μF cm⁻² across the channel length which is adequate for biosensor applications.

Original language	English
Article number	2000634
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	217
Issue number	23
DOIs	https://doi.org/10.1002/pssa.202000634
Publication status	Published - 2020 Dec

Keywords

TiO
biosensors
diamond
encapsulation
solution-gate field-effect transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.202000634

Cite this

Falina, S., Tanabe, K., Iyama, Y., Tadenuma, K., Bi, T., Chang, Y. H., Manaf, A. A., Syamsul, M., & Kawarada, H. (2020). Feasibility Study of TiO_x Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications. Physica Status Solidi (A) Applications and Materials Science, 217(23), Article 2000634. https://doi.org/10.1002/pssa.202000634

Falina, S, Tanabe, K, Iyama, Y, Tadenuma, K, Bi, T, Chang, YH, Manaf, AA, Syamsul, M & Kawarada, H 2020, 'Feasibility Study of TiO_x Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications', Physica Status Solidi (A) Applications and Materials Science, vol. 217, no. 23, 2000634. https://doi.org/10.1002/pssa.202000634

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title = "Feasibility Study of TiOx Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications",

abstract = "The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (gm) to 3000 μA mm−1 and 11.3 mS mm−1, respectively. Furthermore, the scaling gm behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The gm is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm2 (V s)−1 is estimated to be 3–5 μF cm−2 across the channel length which is adequate for biosensor applications.",

keywords = "TiO, biosensors, diamond, encapsulation, solution-gate field-effect transistors",

author = "Shaili Falina and Kyosuke Tanabe and Yutaro Iyama and Kaito Tadenuma and Te Bi and Chang, {Yu Hao} and Manaf, {Asrulnizam Abd} and Mohd Syamsul and Hiroshi Kawarada",

note = "Funding Information: This study was funded in part by JSPS Grant‐in‐Aid for Scientific Research(S) under Grant (JP26220903) and in part by the Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development and Universiti Sains Malaysia Bridging Grant 304.CINOR.6316527. Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

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AU - Manaf, Asrulnizam Abd

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AU - Kawarada, Hiroshi

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N2 - The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (gm) to 3000 μA mm−1 and 11.3 mS mm−1, respectively. Furthermore, the scaling gm behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The gm is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm2 (V s)−1 is estimated to be 3–5 μF cm−2 across the channel length which is adequate for biosensor applications.

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