FET properties of surface silylated single wall carbon nanotubes

Ryotaro Kumashiro*, Nobuya Hiroshiba, Hirotaka Ohashi, Takeshi Akasaka, Yutaka Maeda, Shinzo Suzuki, Yohji Achiba, Rikizo Hatakeyama, Katsumi Tanigaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

Original languageEnglish
Title of host publicationNanowires and Carbon Nanotubes
Subtitle of host publicationScience and Applications
Number of pages6
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA
Duration: 2006 Nov 272006 Dec 1


Other2006 MRS Fall Meeting
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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