Field-emission-display basic structure using Si-doped AlN

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1109/IVMC.2003.1223077

Field-emission-display basic structure using Si-doped AlN

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Original language	English
Title of host publication	Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003
Editors	Mikio Takai, Junzo Ishikawa, Yasuhito Gotoh
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	249-250
Number of pages	2
ISBN (Electronic)	4818195154, 9784818195158
DOIs	https://doi.org/10.1109/IVMC.2003.1223077
Publication status	Published - 2003
Externally published	Yes
Event	16th International Vacuum Microelectronics Conference, IVMC 2003 - Toyonaka, Osaka, Japan Duration: 2003 Jul 7 → 2003 Jul 11

Publication series

Name	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Volume	2003-January

Other

Other	16th International Vacuum Microelectronics Conference, IVMC 2003
Country/Territory	Japan
City	Toyonaka, Osaka
Period	03/7/7 → 03/7/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IVMC.2003.1223077

Cite this

Taniyasu, Y., Kasu, M., Makimoto, T., & Kobayashi, N. (2003). Field-emission-display basic structure using Si-doped AlN. In M. Takai, J. Ishikawa, & Y. Gotoh (Eds.), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003 (pp. 249-250). Article 1223077 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVMC.2003.1223077

Field-emission-display basic structure using Si-doped AlN. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki et al.
Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. ed. / Mikio Takai; Junzo Ishikawa; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. p. 249-250 1223077 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Taniyasu, Y, Kasu, M, Makimoto, T & Kobayashi, N 2003, Field-emission-display basic structure using Si-doped AlN. in M Takai, J Ishikawa & Y Gotoh (eds), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003., 1223077, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 249-250, 16th International Vacuum Microelectronics Conference, IVMC 2003, Toyonaka, Osaka, Japan, 03/7/7. https://doi.org/10.1109/IVMC.2003.1223077

Taniyasu Y, Kasu M, Makimoto T, Kobayashi N. Field-emission-display basic structure using Si-doped AlN. In Takai M, Ishikawa J, Gotoh Y, editors, Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 249-250. 1223077. (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC). doi: 10.1109/IVMC.2003.1223077

Taniyasu, Yoshitaka ; Kasu, Makoto ; Makimoto, Toshiki et al. / Field-emission-display basic structure using Si-doped AlN. Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. editor / Mikio Takai ; Junzo Ishikawa ; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 249-250 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC).

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author = "Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",

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Field-emission-display basic structure using Si-doped AlN

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ASJC Scopus subject areas

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