Field-emission properties of surface-processed TiC tips

Y. Ishizawa; S. Aoki; C. Oshima; S. Otani

doi:10.1088/0022-3727/22/11/031

Field-emission properties of surface-processed TiC tips

Y. Ishizawa^*, S. Aoki, C. Oshima, S. Otani

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Surface-processed TiC〈110〉 tips have been developed to obtain highly stable emission as a cold field-electron emission source. The surface processing consists of heating the tip at 1000-1100°C in a gas such as ethylene, oxygen or hydrogen sulphide, and the subsequent continuous emission of 10 μA for 30 minutes. The field-emission pattern and the current stability of surface-processed TiC〈110〉 tips have been investigated for several kinds of surface processing.

Original language	English
Pages (from-to)	1763-1767
Number of pages	5
Journal	Journal of Physics D: Applied Physics
Volume	22
Issue number	11
DOIs	https://doi.org/10.1088/0022-3727/22/11/031
Publication status	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Surface-processed TiC〈110〉 tips have been developed to obtain highly stable emission as a cold field-electron emission source. The surface processing consists of heating the tip at 1000-1100°C in a gas such as ethylene, oxygen or hydrogen sulphide, and the subsequent continuous emission of 10 μA for 30 minutes. The field-emission pattern and the current stability of surface-processed TiC〈110〉 tips have been investigated for several kinds of surface processing.",

author = "Y. Ishizawa and S. Aoki and C. Oshima and S. Otani",

year = "1989",

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AU - Ishizawa, Y.

AU - Aoki, S.

AU - Oshima, C.

AU - Otani, S.

PY - 1989

Y1 - 1989

N2 - Surface-processed TiC〈110〉 tips have been developed to obtain highly stable emission as a cold field-electron emission source. The surface processing consists of heating the tip at 1000-1100°C in a gas such as ethylene, oxygen or hydrogen sulphide, and the subsequent continuous emission of 10 μA for 30 minutes. The field-emission pattern and the current stability of surface-processed TiC〈110〉 tips have been investigated for several kinds of surface processing.

AB - Surface-processed TiC〈110〉 tips have been developed to obtain highly stable emission as a cold field-electron emission source. The surface processing consists of heating the tip at 1000-1100°C in a gas such as ethylene, oxygen or hydrogen sulphide, and the subsequent continuous emission of 10 μA for 30 minutes. The field-emission pattern and the current stability of surface-processed TiC〈110〉 tips have been investigated for several kinds of surface processing.

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JF - Journal of Physics D: Applied Physics

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Field-emission properties of surface-processed TiC tips

Abstract

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