Abstract
To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and Secondary Ion Mass Spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force.
| Original language | English |
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| Title of host publication | An Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems |
| Publisher | Publ by IEEE |
| Pages | 245-250 |
| Number of pages | 6 |
| ISBN (Print) | 078031834X |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn Duration: 1994 Jan 25 → 1994 Jan 28 |
Other
| Other | Proceedings of the IEEE Micro Electro Mechanical Systems |
|---|---|
| City | Oiso, Jpn |
| Period | 94/1/25 → 94/1/28 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering