First principles and macroscopic theories of semiconductor epitaxial growth

Kenji Shiraishi; Norihisa Oyama; Ko Okajima; Nori Miyagishima; Kyozaburo Takeda; Hiroshi Yamaguchi; Tomonori Ito; Takahisa Ohno

doi:10.1016/S0022-0248(01)01903-0

First principles and macroscopic theories of semiconductor epitaxial growth

Kenji Shiraishi, Norihisa Oyama, Ko Okajima, Nori Miyagishima, Kyozaburo Takeda, Hiroshi Yamaguchi, Tomonori Ito, Takahisa Ohno

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

Original language	English
Pages (from-to)	206-211
Number of pages	6
Journal	Journal of Crystal Growth
Volume	237-239
Issue number	1 4 I
DOIs	https://doi.org/10.1016/S0022-0248(01)01903-0
Publication status	Published - 2002 Apr

Keywords

A1. Defects
A1. Growth models
A1. Stresses
A3. Molecular beam epitaxy

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)01903-0

Cite this

@article{ebc4e38ee8fe498387ee297568ec5e32,

title = "First principles and macroscopic theories of semiconductor epitaxial growth",

abstract = "We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.",

keywords = "A1. Defects, A1. Growth models, A1. Stresses, A3. Molecular beam epitaxy",

author = "Kenji Shiraishi and Norihisa Oyama and Ko Okajima and Nori Miyagishima and Kyozaburo Takeda and Hiroshi Yamaguchi and Tomonori Ito and Takahisa Ohno",

note = "Funding Information: We would like to thank Professor K. Nakajima and Professor H. Nakayama for their stimulating discussions. We also thank Dr. K. Murase and Dr. Y. Takahashi for their useful advice. This work was partly supported by JSPS under Contract No. RFT96P00203 and the Grant-in-Aid for Scientific Research by the Ministry of Education, Science and Culture of Japan and the NEDO International Joint Research Grant.",

year = "2002",

month = apr,

doi = "10.1016/S0022-0248(01)01903-0",

language = "English",

volume = "237-239",

pages = "206--211",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1 4 I",

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TY - JOUR

T1 - First principles and macroscopic theories of semiconductor epitaxial growth

AU - Shiraishi, Kenji

AU - Oyama, Norihisa

AU - Okajima, Ko

AU - Miyagishima, Nori

AU - Takeda, Kyozaburo

AU - Yamaguchi, Hiroshi

AU - Ito, Tomonori

AU - Ohno, Takahisa

N1 - Funding Information: We would like to thank Professor K. Nakajima and Professor H. Nakayama for their stimulating discussions. We also thank Dr. K. Murase and Dr. Y. Takahashi for their useful advice. This work was partly supported by JSPS under Contract No. RFT96P00203 and the Grant-in-Aid for Scientific Research by the Ministry of Education, Science and Culture of Japan and the NEDO International Joint Research Grant.

PY - 2002/4

Y1 - 2002/4

N2 - We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

AB - We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

KW - A1. Defects

KW - A1. Growth models

KW - A1. Stresses

KW - A3. Molecular beam epitaxy

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U2 - 10.1016/S0022-0248(01)01903-0

DO - 10.1016/S0022-0248(01)01903-0

M3 - Article

AN - SCOPUS:17344381039

SN - 0022-0248

VL - 237-239

SP - 206

EP - 211

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1 4 I

ER -

First principles and macroscopic theories of semiconductor epitaxial growth

Abstract

Keywords

ASJC Scopus subject areas

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