First-principles study on piezoelectric constants in strained BN, AlN, and GaN

Kazuhiro Shimada*, Takayuki Sota, Katsuo Suzuki, Hajime Okumura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)


Piezoelectric constants at the states suffering volume-conserving strains have been calculated by using geometric quantum Berry phase approach for bulk BN, AlN, and GaN with wurtzite structure. Two step calculations have been carried out: for given strains the first-principles molecular dynamics method has been applied to relax the electronic ground state and the ionic position in the unit cell, after then the piezoelectric constants have been calculated by applying the other probing strains. Very large changes have been found in piezoelectric constants at the states distorted differently. This nonlinear piezoelectricity is shown to come from the structural parameters in the distorted unit cell for each strained state.

Original languageEnglish
Pages (from-to)L1421-L1423
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 PART A
Publication statusPublished - 1998 Dec 1


  • First-principles
  • Geometric quantum Berry phase
  • Group III nitrides
  • Macroscopic polarization
  • Piezoelectric constant
  • Volume-conserving strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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