Flexible and stretchable thin-film transistors based on molybdenum disulphide

Jiang Pu*, Lain Jong Li, Taishi Takenobu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    57 Citations (Scopus)


    The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics. This journal is

    Original languageEnglish
    Pages (from-to)14996-15006
    Number of pages11
    JournalPhysical Chemistry Chemical Physics
    Issue number29
    Publication statusPublished - 2014 Aug 7

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Physics and Astronomy(all)


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