Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

Shigeru Kanazawa; Takeshi Fujisawa; Kiyoto Takahata; Toshio Ito; Yuta Ueda; Wataru Kobayashi; Hiroyuki Ishii; Hiroaki Sanjoh

doi:10.1109/LPT.2015.2438076

Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

Shigeru Kanazawa, Takeshi Fujisawa, Kiyoto Takahata, Toshio Ito, Yuta Ueda, Wataru Kobayashi, Hiroyuki Ishii, Hiroaki Sanjoh

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulse-amplitude modulation operation after a 10-km single-mode fiber transmission.

Original language	English
Article number	7113803
Pages (from-to)	1699-1701
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2015.2438076
Publication status	Published - 2015 Aug 15
Externally published	Yes

Keywords

100 Gb/s
Distributed feedback (DFB) laser
EADFB laser
Ethernet
InGaAlAs
electroabsorption modulator (EAM)
flip-chip interconnection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2015.2438076

Cite this

@article{7f7afde5025546c792fb4c6196ebe888,

title = "Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter",

abstract = "We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulse-amplitude modulation operation after a 10-km single-mode fiber transmission.",

keywords = "100 Gb/s, Distributed feedback (DFB) laser, EADFB laser, Ethernet, InGaAlAs, electroabsorption modulator (EAM), flip-chip interconnection",

author = "Shigeru Kanazawa and Takeshi Fujisawa and Kiyoto Takahata and Toshio Ito and Yuta Ueda and Wataru Kobayashi and Hiroyuki Ishii and Hiroaki Sanjoh",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = aug,

day = "15",

doi = "10.1109/LPT.2015.2438076",

language = "English",

volume = "27",

pages = "1699--1701",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "16",

}

TY - JOUR

T1 - Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

AU - Kanazawa, Shigeru

AU - Fujisawa, Takeshi

AU - Takahata, Kiyoto

AU - Ito, Toshio

AU - Ueda, Yuta

AU - Kobayashi, Wataru

AU - Ishii, Hiroyuki

AU - Sanjoh, Hiroaki

PY - 2015/8/15

Y1 - 2015/8/15

N2 - We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulse-amplitude modulation operation after a 10-km single-mode fiber transmission.

AB - We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulse-amplitude modulation operation after a 10-km single-mode fiber transmission.

KW - 100 Gb/s

KW - Distributed feedback (DFB) laser

KW - EADFB laser

KW - Ethernet

KW - InGaAlAs

KW - electroabsorption modulator (EAM)

KW - flip-chip interconnection

UR - http://www.scopus.com/inward/record.url?scp=84937116556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937116556&partnerID=8YFLogxK

U2 - 10.1109/LPT.2015.2438076

DO - 10.1109/LPT.2015.2438076

M3 - Article

AN - SCOPUS:84937116556

SN - 1041-1135

VL - 27

SP - 1699

EP - 1701

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

M1 - 7113803

ER -

Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this