Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Shigeru Kanazawa; Toshio Ito; Tomonari Sato; Ryuzo Iga; Wataru Kobayashi; Kiyoto Takahata; Hiroaki Sanjoh; Hiroyuki Ishii

doi:10.1587/elex.11.20141028

Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Shigeru Kanazawa^*, Toshio Ito, Tomonari Sato, Ryuzo Iga, Wataru Kobayashi, Kiyoto Takahata, Hiroaki Sanjoh, Hiroyuki Ishii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

Original language	English
Article number	20141028
Pages (from-to)	1-4
Number of pages	4
Journal	ieice electronics express
Volume	12
Issue number	1
DOIs	https://doi.org/10.1587/elex.11.20141028
Publication status	Published - 2014 Dec 19
Externally published	Yes

Keywords

100GbE
DML
Flip-chip

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1587/elex.11.20141028

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title = "Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure",

abstract = "The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.",

keywords = "100GbE, DML, Flip-chip",

author = "Shigeru Kanazawa and Toshio Ito and Tomonari Sato and Ryuzo Iga and Wataru Kobayashi and Kiyoto Takahata and Hiroaki Sanjoh and Hiroyuki Ishii",

note = "Publisher Copyright: {\textcopyright} IEICE 2015",

year = "2014",

month = dec,

day = "19",

doi = "10.1587/elex.11.20141028",

language = "English",

volume = "12",

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T1 - Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

AU - Kanazawa, Shigeru

AU - Ito, Toshio

AU - Sato, Tomonari

AU - Iga, Ryuzo

AU - Kobayashi, Wataru

AU - Takahata, Kiyoto

AU - Sanjoh, Hiroaki

AU - Ishii, Hiroyuki

N1 - Publisher Copyright: © IEICE 2015

PY - 2014/12/19

Y1 - 2014/12/19

N2 - The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

AB - The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

KW - 100GbE

KW - DML

KW - Flip-chip

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DO - 10.1587/elex.11.20141028

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M1 - 20141028

ER -

Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Abstract

Keywords

ASJC Scopus subject areas

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