TY - JOUR
T1 - Flow-rate modulation epitaxy of GaAs
AU - Kobayashi, Naoki
AU - Makimoto, Toshiki
AU - Horikoshi, Yoshiji
PY - 1985/12
Y1 - 1985/12
N2 - We propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH3) by using hydrogen carrier gas. The most characteristic point of this method is that a very small amount of AsH3 is added during the TEG flow period. This small amount of AsH3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.
AB - We propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH3) by using hydrogen carrier gas. The most characteristic point of this method is that a very small amount of AsH3 is added during the TEG flow period. This small amount of AsH3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.
UR - http://www.scopus.com/inward/record.url?scp=0022191342&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022191342&partnerID=8YFLogxK
U2 - 10.1143/JJAP.24.L962
DO - 10.1143/JJAP.24.L962
M3 - Article
AN - SCOPUS:0022191342
SN - 0021-4922
VL - 24
SP - L962-L964
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 12
ER -