Abstract
We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.
| Original language | English |
|---|---|
| Title of host publication | Institute of Physics Conference Series |
| Pages | 737-738 |
| Number of pages | 2 |
| Edition | 79 |
| Publication status | Published - 1986 |
| Externally published | Yes |
Publication series
| Name | Institute of Physics Conference Series |
|---|---|
| Number | 79 |
| ISSN (Print) | 0373-0751 |
ASJC Scopus subject areas
- Physics and Astronomy(all)