Formation of diffusion barrier layer on low-k material using wet fabrication process

M. Yoshino*, T. Yokoshima, T. Osaka, A. Hashimoto, Y. Hagiwara, I. Sato

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review


A novel wet process based on electroless deposition for the fabrication of a diffusion barrier layer for ULSI interconnections is proposed. In this paper, the formation of diffusion barrier layer on low-k substrate using novel wet process was investigated. The fabrication of electroless Nickel-Boron (NiB) layer as a diffusion barrier layer on low-k film using Pd-activated self-assembled monolayer (SAM) as a seed/adhesion layer was attained on low-k film following the dielectric surface modification using ultra-violet (UV) light irradiation. The obtained layer where uniform, had small grain size, and showed good adhesion to low-k materials, both organic and inorganic. We report on the deposition process as well as on the thin film properties.

Original languageEnglish
Number of pages13
Publication statusPublished - 2004
Externally publishedYes
Event205th ECS Meeting - San Antonio, TX, United States
Duration: 2004 May 92004 May 13


Conference205th ECS Meeting
Country/TerritoryUnited States
CitySan Antonio, TX

ASJC Scopus subject areas

  • Engineering(all)


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