TY - JOUR
T1 - Formation of Si thin films by electrodeposition in ionic liquids for solar cell applications
AU - Tsuyuki, Yasuhiro
AU - Takai, Hidenori
AU - Fukunaka, Yasuhiro
AU - Homma, Takayuki
N1 - Funding Information:
This study was financially supported in part by the Japan Science and Technology Agency (JST) CREST program, and Waseda University Grant for Special Research Projects (2017B-188). We would like to thank Mr. Tetsuo Nishida (Stella Chemifa Corporation) for his kind help with the experiment. Y.T. acknowledges the Leading Graduate Program in Science and Engineering, Waseda University, from MEXT, Japan.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/8
Y1 - 2018/8
N2 - Electrochemical processing can potentially be used for the cost-effective and large-scale fabrication of solar cells based on nanostructured Si thin films. Herein, we fabricated Si thin films for solar cell applications by electrodeposition in ionic liquids and performed a systematic investigation of film structure control and doping effects. Notably, relatively smooth and compact films were obtained by the modulation of the rest time during the electrodeposition under light irradiation, and the addition of AlCl3 to the electrolyte allowed the electrodeposition of p-type Si thin films.
AB - Electrochemical processing can potentially be used for the cost-effective and large-scale fabrication of solar cells based on nanostructured Si thin films. Herein, we fabricated Si thin films for solar cell applications by electrodeposition in ionic liquids and performed a systematic investigation of film structure control and doping effects. Notably, relatively smooth and compact films were obtained by the modulation of the rest time during the electrodeposition under light irradiation, and the addition of AlCl3 to the electrolyte allowed the electrodeposition of p-type Si thin films.
UR - http://www.scopus.com/inward/record.url?scp=85050965192&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050965192&partnerID=8YFLogxK
U2 - 10.7567/JJAP.57.08RB11
DO - 10.7567/JJAP.57.08RB11
M3 - Article
AN - SCOPUS:85050965192
SN - 0021-4922
VL - 57
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 8
M1 - 08RB11
ER -