Formation of SiGe and SiGeC layers on Si by Ge and C ion implantation and subsequent ion-beam-induced epitaxial crystallization

Naoto Kobayashi*, Masataka Hasegawa, J. R. Phillips, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds