Formation of SiGe and SiGeC layers on Si by Ge and C ion implantation and subsequent ion-beam-induced epitaxial crystallization

Naoto Kobayashi^*, Masataka Hasegawa, J. R. Phillips, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution