TY - JOUR
T1 - Formation of uniaxially (1 1 2̄ 0) textured ZnO films on glass substrates
AU - Yanagitani, Takahiko
AU - Matsukawa, Mami
AU - Watanabe, Yoshiaki
AU - Otani, Takahiko
N1 - Funding Information:
The authors thank Mr. T. Mihara (AIST) for fruitful discussions on pole figure analysis. This work was partly supported by the Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (B) (2) and the Aid of Doshisha University's Research Promotion Fund.
PY - 2005/4/1
Y1 - 2005/4/1
N2 - Making use of the RF magnetron sputtering technique, we have succeeded in fabricating ZnO films where c-axis of crystallites are unidirectionally aligned in the plane, without the mechanism of epitaxy. The alignment of c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and atomic force microscope measurements. From these results, we have revealed the effect of substrate position during sputtering on the c-axis alignment in the plane. We have also pointed out the important effect of the oxygen ions in the RF plasma on the (1 1 2̄ 0) texture formation.
AB - Making use of the RF magnetron sputtering technique, we have succeeded in fabricating ZnO films where c-axis of crystallites are unidirectionally aligned in the plane, without the mechanism of epitaxy. The alignment of c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and atomic force microscope measurements. From these results, we have revealed the effect of substrate position during sputtering on the c-axis alignment in the plane. We have also pointed out the important effect of the oxygen ions in the RF plasma on the (1 1 2̄ 0) texture formation.
KW - A1. X-ray diffraction
KW - A3. Physical vapor deposition processes
KW - B1. Zinc compounds
KW - B2. Piezoelectric materials
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U2 - 10.1016/j.jcrysgro.2004.12.013
DO - 10.1016/j.jcrysgro.2004.12.013
M3 - Article
AN - SCOPUS:15344349568
SN - 0022-0248
VL - 276
SP - 424
EP - 430
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -