Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma; T. Shibata; K. Kosaka; K. Asai; S. Sumiya; M. Tanaka; T. Sota; A. Uedono; S. F. Chichibu

doi:10.1063/1.3068335

Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma^*, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono, S. F. Chichibu

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

Original language	English
Article number	023529
Journal	Journal of Applied Physics
Volume	105
Issue number	2
DOIs	https://doi.org/10.1063/1.3068335
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3068335

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@article{b47590369ccb45b8afaf6dbb08537fa3,

title = "Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy",

abstract = "Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.",

author = "T. Onuma and T. Shibata and K. Kosaka and K. Asai and S. Sumiya and M. Tanaka and T. Sota and A. Uedono and Chichibu, {S. F.}",

note = "Funding Information: This work was supported in part by Grant-in-Aids of CANTech, IMRAM, Tohoku University, and Scientific Research in Priority Area No. 18069001 under MEXT, Japan. ",

year = "2009",

doi = "10.1063/1.3068335",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

AU - Onuma, T.

AU - Shibata, T.

AU - Kosaka, K.

AU - Asai, K.

AU - Sumiya, S.

AU - Tanaka, M.

AU - Sota, T.

AU - Uedono, A.

AU - Chichibu, S. F.

N1 - Funding Information: This work was supported in part by Grant-in-Aids of CANTech, IMRAM, Tohoku University, and Scientific Research in Priority Area No. 18069001 under MEXT, Japan.

PY - 2009

Y1 - 2009

N2 - Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

AB - Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

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DO - 10.1063/1.3068335

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VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023529

ER -

Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

Abstract

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