Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino*, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)


Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

Original languageEnglish
Pages (from-to)281-282
Number of pages2
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility'. Together they form a unique fingerprint.

Cite this