Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

A. Matsumoto; Y. Takei; A. Matsushita; K. Akahane; Y. Matsushima; K. Utaka

Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

Original language	English
Title of host publication	Technical Digest of the 18th Microoptics Conference, MOC 2013
Publication status	Published - 2013
Event	2013 18th Microoptics Conference, MOC 2013 - Tokyo, Japan Duration: 2013 Oct 27 → 2013 Oct 30

Publication series

Name	Technical Digest of the 18th Microoptics Conference, MOC 2013

Conference

Conference	2013 18th Microoptics Conference, MOC 2013
Country/Territory	Japan
City	Tokyo
Period	13/10/27 → 13/10/30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. / Matsumoto, A.; Takei, Y.; Matsushita, A. et al.
Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013. 6715095 (Technical Digest of the 18th Microoptics Conference, MOC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumoto, A, Takei, Y, Matsushita, A, Akahane, K, Matsushima, Y & Utaka, K 2013, Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. in Technical Digest of the 18th Microoptics Conference, MOC 2013., 6715095, Technical Digest of the 18th Microoptics Conference, MOC 2013, 2013 18th Microoptics Conference, MOC 2013, Tokyo, Japan, 13/10/27.

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abstract = "In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.",

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AU - Matsumoto, A.

AU - Takei, Y.

AU - Matsushita, A.

AU - Akahane, K.

AU - Matsushima, Y.

AU - Utaka, K.

PY - 2013

Y1 - 2013

N2 - In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

AB - In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

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M3 - Conference contribution

AN - SCOPUS:84894185590

SN - 9784863483453

T3 - Technical Digest of the 18th Microoptics Conference, MOC 2013

BT - Technical Digest of the 18th Microoptics Conference, MOC 2013

T2 - 2013 18th Microoptics Conference, MOC 2013

Y2 - 27 October 2013 through 30 October 2013

ER -

Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

Abstract

Publication series

Conference

ASJC Scopus subject areas

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