TY - JOUR
T1 - Fundamental evaluation of semiconductor waveguide-type in-line wavelength selective filter with Fabry-Perot etalon resonator
AU - Otaka, M.
AU - Takahashi, S.
AU - Utaka, K.
AU - Horita, M.
AU - Yazaki, T.
PY - 2001
Y1 - 2001
N2 - The structure, fabrication and fundamental filtering characterstics of an InGaAsP semiconductor-type in-line wavelength selective filter with a Fabry-Perot etalon resonator were presented. Filtering was obtained at transmission wavelength interval of 0.8 nm. The devices were fabricated by liquid phase epitaxy (LPE) on Inp substrates.
AB - The structure, fabrication and fundamental filtering characterstics of an InGaAsP semiconductor-type in-line wavelength selective filter with a Fabry-Perot etalon resonator were presented. Filtering was obtained at transmission wavelength interval of 0.8 nm. The devices were fabricated by liquid phase epitaxy (LPE) on Inp substrates.
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U2 - 10.1109/ICIPRM.2001.929084
DO - 10.1109/ICIPRM.2001.929084
M3 - Article
AN - SCOPUS:0034846284
SN - 1092-8669
SP - 170
EP - 173
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ER -