Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi; K. Yodoshi; K. Minakuchi; Y. Inoue; K. Komeda; N. Tabuchi; Y. Bessho; K. Mori; T. Niina

Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi^*, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda, N. Tabuchi, Y. Bessho, K. Mori, T. Niina

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Dan Botez, Luis Figueroa
Place of Publication	Bellingham, WA, United States
Publisher	Publ by Int Soc for Optical Engineering
Pages	126-133
Number of pages	8
Volume	1219
ISBN (Print)	0819402605
Publication status	Published - 1990
Externally published	Yes
Event	Laser-Diode Technology and Applications II - Los Angeles, CA, USA Duration: 1990 Jan 16 → 1990 Jan 19

Other

Other	Laser-Diode Technology and Applications II
City	Los Angeles, CA, USA
Period	90/1/16 → 90/1/19

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Yamaguchi, T., Yodoshi, K., Minakuchi, K., Inoue, Y., Komeda, K., Tabuchi, N., Bessho, Y., Mori, K., & Niina, T. (1990). Fundamental transverse mode 100 mW semiconductor laser with high reliability. In D. Botez, & L. Figueroa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1219, pp. 126-133). Publ by Int Soc for Optical Engineering.

Fundamental transverse mode 100 mW semiconductor laser with high reliability. / Yamaguchi, T.; Yodoshi, K.; Minakuchi, K. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Dan Botez; Luis Figueroa. Vol. 1219 Bellingham, WA, United States: Publ by Int Soc for Optical Engineering, 1990. p. 126-133.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamaguchi, T, Yodoshi, K, Minakuchi, K, Inoue, Y, Komeda, K, Tabuchi, N, Bessho, Y, Mori, K & Niina, T 1990, Fundamental transverse mode 100 mW semiconductor laser with high reliability. in D Botez & L Figueroa (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1219, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 126-133, Laser-Diode Technology and Applications II, Los Angeles, CA, USA, 90/1/16.

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abstract = "A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.",

author = "T. Yamaguchi and K. Yodoshi and K. Minakuchi and Y. Inoue and K. Komeda and N. Tabuchi and Y. Bessho and K. Mori and T. Niina",

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AU - Yodoshi, K.

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AU - Tabuchi, N.

AU - Bessho, Y.

AU - Mori, K.

AU - Niina, T.

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N2 - A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

AB - A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

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AN - SCOPUS:0025636976

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EP - 133

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Botez, Dan

A2 - Figueroa, Luis

PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

T2 - Laser-Diode Technology and Applications II

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ER -

Fundamental transverse mode 100 mW semiconductor laser with high reliability

Abstract

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ASJC Scopus subject areas

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