Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Keiichi Yodoshi; Norio Tabuchi; Atsushi Tajiri; Kimihide Minakuchi; Yasuyuki Bessho; Koji Komeda; Yasuaki Inoue; Koji Tominaga; Takao Yamaguchi

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Keiichi Yodoshi^*, Norio Tabuchi, Atsushi Tajiri, Kimihide Minakuchi, Yasuyuki Bessho, Koji Komeda, Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Place of Publication	Bellingham, WA, United States
Publisher	Publ by Int Soc for Optical Engineering
Pages	336-342
Number of pages	7
Volume	1634
ISBN (Print)	0819407801
Publication status	Published - 1992
Externally published	Yes
Event	Laser Diode Technology and Applications IV - Los Angeles, CA, USA Duration: 1992 Jan 20 → 1992 Jan 22

Other

Other	Laser Diode Technology and Applications IV
City	Los Angeles, CA, USA
Period	92/1/20 → 92/1/22

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source. / Yodoshi, Keiichi; Tabuchi, Norio; Tajiri, Atsushi et al.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1634 Bellingham, WA, United States: Publ by Int Soc for Optical Engineering, 1992. p. 336-342.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yodoshi, K, Tabuchi, N, Tajiri, A, Minakuchi, K, Bessho, Y, Komeda, K, Inoue, Y, Tominaga, K & Yamaguchi, T 1992, Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1634, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 336-342, Laser Diode Technology and Applications IV, Los Angeles, CA, USA, 92/1/20.

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abstract = "A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.",

author = "Keiichi Yodoshi and Norio Tabuchi and Atsushi Tajiri and Kimihide Minakuchi and Yasuyuki Bessho and Koji Komeda and Yasuaki Inoue and Koji Tominaga and Takao Yamaguchi",

year = "1992",

language = "English",

isbn = "0819407801",

volume = "1634",

pages = "336--342",

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note = "Laser Diode Technology and Applications IV ; Conference date: 20-01-1992 Through 22-01-1992",

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AU - Yodoshi, Keiichi

AU - Tabuchi, Norio

AU - Tajiri, Atsushi

AU - Minakuchi, Kimihide

AU - Bessho, Yasuyuki

AU - Komeda, Koji

AU - Inoue, Yasuaki

AU - Tominaga, Koji

AU - Yamaguchi, Takao

PY - 1992

Y1 - 1992

N2 - A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

AB - A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

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M3 - Conference contribution

AN - SCOPUS:0026467394

SN - 0819407801

VL - 1634

SP - 336

EP - 342

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

T2 - Laser Diode Technology and Applications IV

Y2 - 20 January 1992 through 22 January 1992

ER -

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

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