Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Keiichi Yodoshi*, Norio Tabuchi, Atsushi Tajiri, Kimihide Minakuchi, Yasuyuki Bessho, Koji Komeda, Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Number of pages7
ISBN (Print)0819407801
Publication statusPublished - 1992
Externally publishedYes
EventLaser Diode Technology and Applications IV - Los Angeles, CA, USA
Duration: 1992 Jan 201992 Jan 22


OtherLaser Diode Technology and Applications IV
CityLos Angeles, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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