TY - GEN
T1 - Future technology proposal for Damascene process using all wet electrochemical technique
AU - Osaka, Tetsuya
AU - Yoshino, Masahiro
AU - Shacham-Diamand, Yosi
PY - 2009
Y1 - 2009
N2 - All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.
AB - All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.
UR - http://www.scopus.com/inward/record.url?scp=79955606869&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955606869&partnerID=8YFLogxK
U2 - 10.1149/1.3246599
DO - 10.1149/1.3246599
M3 - Conference contribution
AN - SCOPUS:79955606869
SN - 9781607681168
T3 - ECS Transactions
SP - 67
EP - 73
BT - Electrochemical Processing in ULSI and MEMS 4
PB - Electrochemical Society Inc.
ER -