Future technology proposal for Damascene process using all wet electrochemical technique

Tetsuya Osaka*, Masahiro Yoshino, Yosi Shacham-Diamand

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.

Original languageEnglish
Title of host publicationElectrochemical Processing in ULSI and MEMS 4
PublisherElectrochemical Society Inc.
Number of pages7
ISBN (Electronic)9781566777667
ISBN (Print)9781607681168
Publication statusPublished - 2009

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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