Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

T. Deguchi*, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalSemiconductor Science and Technology
Issue number1
Publication statusPublished - 1998 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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