TY - GEN
T1 - GaN-SiC and GaN-diamond integration via room temperature bonding
AU - Mu, Fengwen
AU - Suga, Tadatomo
PY - 2019/5/1
Y1 - 2019/5/1
N2 - In this work, the room temperature bonding of GaN-SiC and GaN-diamond were achieved by surface activated bonding (SAB) methods. Both of the structure and composition of the bonding interfaces were investigated to understand the bonding mechanisms. The results indicate that SAB methods have a great potential for the integration of GaN onto SiC and diamond substrates with a high thermal conductivity.
AB - In this work, the room temperature bonding of GaN-SiC and GaN-diamond were achieved by surface activated bonding (SAB) methods. Both of the structure and composition of the bonding interfaces were investigated to understand the bonding mechanisms. The results indicate that SAB methods have a great potential for the integration of GaN onto SiC and diamond substrates with a high thermal conductivity.
UR - http://www.scopus.com/inward/record.url?scp=85068378587&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068378587&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735398
DO - 10.23919/LTB-3D.2019.8735398
M3 - Conference contribution
AN - SCOPUS:85068378587
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -