The radio-frequency characteristics of p -type diamond field-effect transistors with hydrogen surface termination were numerically analyzed using an equivalent-circuit model. From the gate-source capacitance (CGS) -voltage (VGS) results extracted from measured s parameters, the authors found a plateau in CGS within a certain VGS range. This means that a two-dimensional hole gas channel forms parallel to the surface and that the channel is separated by a thin energy-barrier layer with an infinite height from the gate metal. At a high negative VGS, as negative VGS is increased, CGS increases steeply. This results from holes penetrating the energy barrier.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)