Abstract
The resistivity¿frequency characteristics of longitudinal wave velocities propagating parallel to the c-axis in a GaN single crystal were theoretically estimated by considering the piezoelectric acousto-electric effect. The temperature and frequency dependences of longitudinal and shear wave velocities in conductive and semiconductive GaN single-crystal samples were experimentally investigated by Brillouin scattering. The temperature dependence of longitudinal and shear wave velocities had a linear tendency in the conductive sample, whereas in the semiconductive sample, those had a similar tendency to the predicted velocity changes resulting from the piezoelectric stiffening effect. However, the temperature dependence of shear wave velocity, which does not possess piezoelectric coupling, had a tendency similar to that of the longitudinal wave in the semiconductive sample, unexpectedly. The frequency dependence of longitudinal wave velocities in the semiconductive sample had a tendency similar to the predicted velocity changes resulting from the piezoelectric stiffening effect.
| Original language | English |
|---|---|
| Article number | 6863851 |
| Pages (from-to) | 1307-1313 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
| Volume | 61 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Aug |
| Externally published | Yes |
ASJC Scopus subject areas
- Instrumentation
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering